IGLD60R190D1SAUMA1

Description：GAN HV PG-LSON-8
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:da753d08ff9e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IGLD60R190D1SAUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is GAN HV PG-LSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IGLD60R190D1SAUMA1

Description：GAN HV PG-LSON-8
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-10V
Input Capacitance (Ciss) (Max) @ Vds：157 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-LSON-8-1
Package / Case：8-LDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for IGLD60R190D1SAUMA1

IGLD60R190D1SAUMA1

Single FETs, MOSFETs Overview

The IGLD60R190D1S is a 600V CoolGaN enhancement-mode power transistor. It features a maximum drain-source voltage of 600 V and a typical on-state resistance of 140 mΩ at Tj=25°C. The device exhibits ultra-fast switching with a typical gate charge of 3.2 nC and zero reverse-recovery charge. It supports a continuous drain current of 10 A and a pulsed current of 23 A at 25°C case temperature. Packaged in PG-LSON-8-1, it offers superior commutation ruggedness and low output capacitance.

Single FETs, MOSFETs Feature Summary

Enhancement mode normally-off operation ensuring safe switching
Ultra-fast switching capability with minimal gate and output charge
Zero reverse-recovery charge enabling efficient reverse conduction
Superior commutation ruggedness for robust performance

Single FETs, MOSFETs Applications

Consumer SMPS based on half-bridge topologies
High density chargers utilizing Totem pole PFC
High frequency LLC converters
Flyback converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm package type and marking details. Ensure compliance with JEDEC standards for standard grade applications as specified in the datasheet. Confirm thermal management requirements align with the junction-to-case thermal resistance limits provided in the maximum ratings table.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency power conversion where low switching losses are critical. The low gate charge facilitates faster switching speeds compared to conventional silicon devices. Consider the thermal characteristics and safe operating area limits when designing for high-current applications or elevated ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolGaN family of gallium nitride transistors. It utilizes enhancement-mode technology designed for 600V power conversion applications. The product line focuses on improving system efficiency and power density through reduced switching losses and elimination of reverse recovery effects inherent in silicon MOSFETs.