IGN1011L1200

Overview

The IGN1011L1200 is a high-power GaN-on-SiC RF power transistor designed for IFF/SSR avionics systems. It operates at 1030 and 1090 MHz, delivering a minimum of 1200 W peak output power under Mode S ELM pulse conditions with typical efficiency exceeding 85% and gain above 17 dB. The device utilizes a metal-based package with an epoxy-sealed ceramic lid for thermal management. Absolute maximum ratings include a drain-source voltage of 180 V and an operating channel temperature range from -55 to +225 °C.

Feature Summary

• Utilizes GaN on SiC HEMT technology for high power density
• Features pre-matched input impedance for simplified integration
• Capable of withstanding 20:1 VSWR mismatch conditions
• Housed in a metal-based package with an epoxy-sealed ceramic lid

Applications

• L-band Avionics IFF & SSR Systems
• Uplink and downlink transponder applications
• Standard Mode S applications

Procurement Notes

Verify the specific suffix (S or standard) against the mechanical drawing requirements, as the IGN1011L1200S denotes an earless flange option while the standard version features a bolt-down flange. Confirm RoHS and REACH compliance status directly with Integra Technologies prior to final procurement decisions.

Selection Notes

Select this component for L-band avionics requiring high peak power and exceptional efficiency under pulsed Mode S ELM conditions. Ensure the design accommodates the 50 V supply voltage and the specific thermal resistance characteristics provided in the datasheet. Verify that the application environment supports the specified operating channel temperature limits.

Part Context

This transistor belongs to the family of very high-power RF transistors and amplifiers developed by Integra Technologies. These devices are engineered specifically for demanding avionics environments, leveraging Gallium Nitride on Silicon Carbide technology to achieve superior performance metrics compared to traditional silicon-based solutions.

Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.