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The IGN1011L70 is a Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (HEMT) manufactured by Integra Technologies Inc. It operates within the L-Band frequency range of 1.03 GHz to 1.09 GHz. The device features a maximum drain-source voltage rating of 50 V and a typical gate current of 22 mA. Designed for high-power pulsed applications, it delivers an output power capability of approximately 80 W with a gain of 22 dB. The component utilizes a PL32A2 package configuration suitable for robust RF performance in demanding environments.
Verify the specific datasheet revision and pinout configuration directly from Integra Technologies Inc. before integration. Confirm that the PL32A2 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified pulsed power dissipation levels during operation.
Select this component for applications requiring high linearity and efficiency in the 1-1.1 GHz range. Consider the 50V bias requirement and ensure the driving stage can provide the necessary gate drive signals. Evaluate the trade-off between peak power density and average thermal load based on the specific duty cycle constraints of the target system.
This part belongs to Integra Technologies' portfolio of high-power RF transistors designed for defense and aerospace sectors. It complements other L-Band devices like the IB1011S70, offering comparable frequency coverage but with distinct packaging and power characteristics tailored for specific pulsed radar architectures.
Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the PL32A2 package, 50V rating, and L-Band frequency specifications. Consult Integra Technologies for qualified alternatives or cross-reference options.