IGN1011L70

IGN1011L70

$162.09
  • Description:RF MOSFET GAN HEMT 50V PL32A2
  • Series:-

SKU:9c7d91c9f7b8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET GAN HEMT 50V PL32A2
  • Series:-
  • Mfr:Integra Technologies Inc.
  • Package:Bulk
  • Technology:GaN HEMT
  • Frequency:1.03GHz ~ 1.09GHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:22 mA
  • Power - Output:80W
  • Voltage - Rated:120 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:PL32A2
  • Supplier Device Package:PL32A2
  • Configuration:-

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IGN1011L70

Overview

The IGN1011L70 is a Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (HEMT) manufactured by Integra Technologies Inc. It operates within the L-Band frequency range of 1.03 GHz to 1.09 GHz. The device features a maximum drain-source voltage rating of 50 V and a typical gate current of 22 mA. Designed for high-power pulsed applications, it delivers an output power capability of approximately 80 W with a gain of 22 dB. The component utilizes a PL32A2 package configuration suitable for robust RF performance in demanding environments.

Feature Summary

  • Utilizes GaN-on-SiC HEMT technology for enhanced thermal and power handling capabilities
  • Optimized for L-Band radar systems operating between 1030 and 1090 MHz
  • Features internal impedance pre-matching for simplified circuit integration

Applications

  • High-power pulsed avionics radar transmitters
  • L-Band military communication systems
  • Air traffic control radar infrastructure

Procurement Notes

Verify the specific datasheet revision and pinout configuration directly from Integra Technologies Inc. before integration. Confirm that the PL32A2 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified pulsed power dissipation levels during operation.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 1-1.1 GHz range. Consider the 50V bias requirement and ensure the driving stage can provide the necessary gate drive signals. Evaluate the trade-off between peak power density and average thermal load based on the specific duty cycle constraints of the target system.

Part Context

This part belongs to Integra Technologies' portfolio of high-power RF transistors designed for defense and aerospace sectors. It complements other L-Band devices like the IB1011S70, offering comparable frequency coverage but with distinct packaging and power characteristics tailored for specific pulsed radar architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the PL32A2 package, 50V rating, and L-Band frequency specifications. Consult Integra Technologies for qualified alternatives or cross-reference options.

IGN1011L70IGN1011L70
$162.09
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