IGN2729M400R2

$579.33

Description：RF MOSFET
Series：*

SKU:1c135d4c7103 Category: RF FETs, MOSFETs Brand: Integra Technologies Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET
Series：*
Mfr：Integra Technologies Inc.
Package：Tray
Technology：-
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IGN2729M400R2

Overview

The IGN2729M400R2 is a gallium nitride (GaN) high-electron-mobility transistor (HEMT) manufactured by Integra Technologies Inc. It operates within the frequency range of 2.7 to 2.9 GHz. The device features internal pre-matching capabilities, simplifying integration into RF circuits. It is classified as an RF power component designed for high-performance applications requiring reliable solid-state amplification in microwave bands.

Feature Summary

Utilizes GaN HEMT technology for enhanced power density and efficiency
Internally pre-matched design reduces external circuit complexity
Optimized for operation in the 2.7 to 2.9 GHz frequency band

Applications

RF power amplification systems
Microwave communication infrastructure
Solid-state transmitter modules

Procurement Notes

Verify RoHS3 compliance status and moisture sensitivity level (MSL 1) prior to procurement. Confirm that the specific suffix 'R2' aligns with required packaging or tape-and-reel specifications if applicable. Ensure environmental classifications meet EAR99 export requirements for your region before finalizing orders.

Selection Notes

Select this component when a pre-matched GaN solution is required for the 2.7–2.9 GHz range. Consider its internal matching network benefits over discrete matching designs. Evaluate thermal management needs based on its role as a high-power RF device. Verify compatibility with existing system impedance standards.

Part Context

This part belongs to Integra Technologies Inc.'s portfolio of RF FETs and MOSFETs. The manufacturer specializes in RF and microwave high-power solutions. The IGN2729M400R2 represents their use of GaN/SiC technology for advanced transistor applications, distinct from standard silicon-based components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other Integra GaN HEMTs only if electrical parameters and package dimensions are verified against official datasheets.