IGT2731M130

Overview

The IGT2731M130 is a 50-ohm matched high-power Gallium Nitride High Electron Mobility Transistor (HEMT) fabricated on Silicon Carbide. Designed for S-band radar applications, it delivers a minimum peak pulse power of 130 watts under specific operating conditions: a pulse width of 300 microseconds and a duty cycle of 10%.

Feature Summary

• Utilizes GaN-on-SiC technology for high-power RF performance
• Factory matched to 50-ohm impedance for simplified integration
• Engineered specifically for S-band radar transmitter modules

Applications

• S-band radar systems
• High-power RF amplifier stages
• Microwave transmitter modules

Procurement Notes

Verify the specific datasheet revision and electrical test conditions against your design requirements. Confirm that the 130W output rating aligns with your system's thermal management capabilities and pulse duty cycle constraints. Ensure compatibility with S-band frequency specifications before procurement.

Selection Notes

Select this component when designing S-band radar transmitters requiring high peak power density. The integrated 50-ohm matching reduces external circuit complexity. Consider the GaN-on-SiC material properties for efficiency and thermal stability in pulsed operation environments compared to traditional semiconductor technologies.

Part Context

Integra Technologies markets this device as part of their portfolio of microwave transistors for defense and aerospace radar. It represents a solution for high-power amplification in the S-band spectrum, leveraging wide-bandgap semiconductor advantages for robust performance in demanding radar applications.

Replacement Considerations

No public substitute part numbers are documented. Evaluate alternative GaN HEMTs based on S-band compatibility, 50-ohm matching, and equivalent 130W peak pulse power ratings at identical pulse widths and duty cycles.