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Product Detailed Parameters
- Description：IGBT WITHOUT ANTI-PARALLEL DIODE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IGW50N65HS is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP technology. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 305 W. Operating temperatures range from -40°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Feature Summary
- Single IGBT configuration without an integrated anti-parallel diode
- TRENCHSTOP 5 H5 technology for optimized switching performance
- High thermal stability with a maximum junction temperature of 175°C
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the exact suffix against official Infineon documentation to confirm the specific variant, as designations like HS may indicate engineering samples or specific packaging configurations distinct from standard commercial parts. Cross-reference the Mouser part number 726-IGW50N65HS with the manufacturer's datasheet to ensure compatibility with your circuit requirements before procurement.
Selection Notes
Select this component when a high-voltage, high-current single IGBT without a freewheeling diode is required. The TO-247-3 package suits applications needing robust thermal management and through-hole mounting. Ensure the application can handle the 650 V blocking capability and that the 80 A current rating aligns with the load profile under the expected ambient temperature conditions.
Part Context
This device belongs to the Infineon TRENCHSTOP 5 family, designed for medium-power applications. It complements other variants in the series by offering a standalone transistor option, allowing designers to pair it with external diodes tailored to specific reverse recovery characteristics. This flexibility supports customized circuit designs for efficiency and cost optimization.
Replacement Considerations
Direct substitutes include IGW50N65H5 and IGW50N65F5, which share similar electrical parameters but may differ in saturation voltage or switching speed. Verify pinout compatibility and thermal resistance values when replacing to ensure equivalent performance in the existing assembly.
