IHW30N110R3FKSA1

IHW30N110R3FKSA1

$2.33
  • Description:IGBT TRENCH 1100V 60A TO247-3
  • Series:-

SKU:dfb6ad77fb4f Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 1100V 60A TO247-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1100 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:1.75V @ 15V, 30A
  • Power - Max:333 W
  • Switching Energy:1.15mJ (off)
  • Input Type:Standard
  • Gate Charge:180 nC
  • Td (on/off) @ 25°C:-/350ns
  • Test Condition:600V, 30A, 15Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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IHW30N110R3FKSA1

Overview

The IHW30N110R3FKSA1 is a reverse-conducting IGBT from Infineon's Resonant Switching Series, featuring a monolithic body diode. It is housed in a TO-247-3 package and rated for a maximum collector-emitter voltage of 1100 V with a continuous collector current of 60 A. The device supports soft switching characteristics and operates at temperatures up to 175 °C.

Feature Summary

  • Reverse conducting configuration integrating an IGBT and a body diode within a single component.
  • Soft switching technology designed to minimize switching losses during operation.
  • High thermal stability allowing reliable performance at elevated junction temperatures.

Applications

  • Industrial power control systems
  • Resonant converter topologies
  • High-frequency power supply designs

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required voltage and current ratings for the target application circuit before procurement.

Selection Notes

Select this component for applications requiring integrated freewheeling functionality without external diodes. Consider the soft-switching capabilities for high-frequency resonant circuits where minimizing switching loss is critical for system efficiency.

Part Context

This part belongs to Infineon's discrete IGBT product line, specifically engineered for industrial power management. It represents a specialized solution combining switching and rectification functions to simplify circuit design and reduce component count in power electronics.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment when considering cross-references from other manufacturers or different series within the same family.

FAQ

What type of switching technology does this IGBT utilize?

It utilizes soft switching technology, which is optimized for resonant converter applications to reduce switching losses.

Does this component include an internal diode?

Yes, it is a reverse-conducting IGBT that integrates a monolithic body diode.

IHW30N110R3FKSA1IHW30N110R3FKSA1
$2.33
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