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The IHW30N110R3FKSA1 is a reverse-conducting IGBT from Infineon's Resonant Switching Series, featuring a monolithic body diode. It is housed in a TO-247-3 package and rated for a maximum collector-emitter voltage of 1100 V with a continuous collector current of 60 A. The device supports soft switching characteristics and operates at temperatures up to 175 °C.
Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required voltage and current ratings for the target application circuit before procurement.
Select this component for applications requiring integrated freewheeling functionality without external diodes. Consider the soft-switching capabilities for high-frequency resonant circuits where minimizing switching loss is critical for system efficiency.
This part belongs to Infineon's discrete IGBT product line, specifically engineered for industrial power management. It represents a specialized solution combining switching and rectification functions to simplify circuit design and reduce component count in power electronics.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment when considering cross-references from other manufacturers or different series within the same family.
It utilizes soft switching technology, which is optimized for resonant converter applications to reduce switching losses.
Yes, it is a reverse-conducting IGBT that integrates a monolithic body diode.