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Product Detailed Parameters
- Description：IGBT 650V 80A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 50A
- Power - Max：282 W
- Switching Energy：740µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：230 nC
- Td (on/off) @ 25°C：26ns/220ns
- Test Condition：400V, 25A, 8Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IHW50N65R5 is a reverse-conducting IGBT with a monolithic body diode from the Resonant Switching Series. It features TRENCHSTOP technology for low VCEsat and Eoff, operating at 650V collector-emitter voltage. The device supports up to 80A continuous collector current and 150A pulsed current. Key parameters include a saturation voltage of 1.35V at 25°C, power dissipation of 282W at 25°C case temperature, and a maximum junction temperature of 175°C.
Feature Summary
- Monolithic reverse-conducting diode with low forward voltage
- TRENCHSTOP technology providing tight parameter distribution and stable temperature behavior
- Positive temperature coefficient in VCEsat enabling easy parallel switching capability
- Low electromagnetic interference (EMI) performance
Applications
- Induction cooking
- Inverterized microwave ovens
- Resonant converters
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm compliance with RoHS standards and Pb-free lead plating requirements. Ensure ordering suffixes match the specific package variant PG-TO247-3. Validate that the product does not require automotive qualification certifications such as AEC-Q100 or AEC-Q101.
Selection Notes
Select this component for resonant applications requiring integrated freewheeling functionality without external diodes. Consider the thermal resistance values when designing heat sinks for high-power scenarios. Evaluate the switching energy losses relative to the gate resistance and operating frequency. Verify compatibility with standard TO-247 mounting hardware and wave soldering processes.
Part Context
This device belongs to Infineon's Resonant Switching Series utilizing TRENCHSTOP technology. It integrates an IGBT and a fast recovery diode into a single silicon chip. The package type is PG-TO247-3, suitable for through-hole mounting. It is designed for industrial power control applications where compact size and high efficiency are critical.
Replacement Considerations
Direct replacements must maintain the 650V rating, TO-247-3 package, and reverse-conducting configuration. Verify equivalent switching speeds and thermal characteristics. Cross-reference with other TRENCHSTOP series devices if pinout and electrical parameters align.
