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The IKA15N65ET6XKSA1 is a TRENCHSTOP™ IGBT6 discrete device with an integrated antiparallel Rapid diode, housed in a PG-TO220-3 FP package. It features a collector-emitter voltage of 650 V and a continuous collector current of 15 A at 25°C case temperature. The typical saturation voltage is 1.5 V, supporting a maximum junction temperature of 175°C. Short-circuit withstand time is rated at 3 µs. The component includes a soft, fast recovery antiparallel diode with low reverse recovery charge.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the procurement channel provides valid traceability for industrial-grade components. Confirm that the received units match the PG-TO220-3 FP physical dimensions and marking codes specified in the datasheet revision 1.10.
Select this component for applications requiring robust industrial performance with high thermal stability up to 175°C. The low gate charge facilitates efficient driver design, while the integrated Rapid diode simplifies circuit topology by eliminating external freewheeling diodes. Consider the 3 µs short-circuit tolerance when designing protection circuits for inductive loads.
This part belongs to the TRENCHSTOP™ IGBT6 family from Infineon Technologies, designed for general-purpose power switching. It utilizes silicon technology within a through-hole TO-220FP-3 package. The product spectrum includes PSpice models for simulation. It is distinct from automotive-qualified variants as it is not AEC-Q101 certified.
Public confirmed substitute part numbers are not available in the provided source material.