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The IKB06N60TATMA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the Trenchstop IGBT3 series by Infineon Technologies. It features a D2PAK-3 (TO-263-3) surface-mount package with a collector-connected case. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V, with a maximum power dissipation of 88 W. It operates within a junction temperature range of -40°C to +175°C and has a gate-emitter voltage rating of ±20 V.
Verify the specific suffix ATMA1 against official datasheets to confirm packaging type and compliance status. Ensure the ordering part number matches the required tape-and-reel quantity. Cross-reference the manufacturer's latest documentation for any potential design changes or obsolescence notices before finalizing procurement plans.
Select this component for applications requiring a 600V rated single IGBT in a compact SMD form factor. The 12A continuous current rating and 1.5V saturation voltage make it suitable for moderate power switching tasks. Consider the thermal resistance of the D2PAK-3 package when designing heat dissipation solutions for the target environment.
This part belongs to Infineon's Trenchstop IGBT3 family, which integrates trench gate technology with field-stop structures. This combination aims to reduce switching losses while maintaining low conduction drops. The IKB06N60TATMA1 variant specifically targets cost-sensitive consumer electronics and industrial applications where space constraints and thermal performance are critical design factors.
The IKB06N60T is listed as an alias for this part number. Verify pinout compatibility and thermal characteristics if substituting with other 600V TO-263-3 IGBTs from different manufacturers.