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The IKB20N60TATMA1 is a single Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ and Fieldstop technology for 600V applications. The device features a collector-emitter voltage of 600V, a continuous collector current of 41A at 25°C, and a maximum junction temperature of 175°C. It is housed in a PG-TO263-3 package.
Verify the component authenticity against official Infineon documentation. Confirm that the ordering suffix ATMA1 corresponds to the specific reel or tape-and-reel packaging configuration required for your assembly line. Ensure the datasheet revision matches the production batch specifications.
Select this component for designs requiring low conduction losses and high switching speeds in 600V circuits. Consider the thermal resistance values when designing heat sinks. Evaluate the short-circuit withstand capability if fault protection is critical. Verify gate drive requirements align with the specified threshold voltages.
This part belongs to the TRENCHSTOP™ Series, which combines trench gate and field-stop technologies. It is designed to offer an optimum compromise between conduction and switching losses. The series targets efficiency improvements in high-frequency converters used in household appliances and industrial motor drives.
Check for direct substitutes within the same TRENCHSTOP™ family with identical pinouts and electrical ratings. Verify compatibility with existing PCB footprints and thermal management solutions before substitution.
The device has a short-circuit withstand time of 5 µs under specified conditions (VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C).
Yes, it includes an integrated anti-parallel Emitter Controlled HE diode with soft and fast recovery characteristics.
The maximum operating junction temperature is 175°C.