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The IKP15N60TXKSA1 is a TrenchStop IGBT featuring an N-channel configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 26 A at 25°C. It utilizes a TO-220 package for through-hole mounting, supporting a maximum power dissipation of 130 W. The device operates within a temperature range of -40°C to 175°C, with a gate-emitter voltage limit of ±20 V. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V, an off-state energy loss of 0.81 mJ, and a switching frequency range of 2 kHz to 20 kHz.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct specifications. Confirm package type and thermal characteristics match design requirements. Check for RoHS compliance status and material content declarations. Ensure sourcing channels provide genuine components with traceable manufacturing data.
Select this component for designs requiring robust 600 V blocking capability with moderate current handling. The TO-220 package facilitates efficient heat dissipation for through-hole implementations. Consider the specific saturation voltage and switching energy values when calculating thermal management needs for high-frequency operation scenarios.
This device belongs to the TrenchStop IGBT family from Infineon Technologies. It represents a discrete silicon-based power transistor designed for general-purpose switching applications. The product line emphasizes efficiency improvements over previous generations while maintaining reliable performance in standard industrial environments.
IKP15N60T is a compatible variant within the same series offering similar electrical characteristics and packaging options.