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Product Detailed Parameters
- Description：IGBT 1200V 100A TO247-3-46
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 50A
- Power - Max：652 W
- Switching Energy：3mJ (on), 1.9mJ (off)
- Input Type：Standard
- Gate Charge：235 nC
- Td (on/off) @ 25°C：34ns/297ns
- Test Condition：600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-46
- Grade：-
- Qualification：-
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Overview
The IKQ50N120CH3 is a third-generation Highspeed IGBT featuring copackaged soft, fast recovery full current rated anti-parallel Emitter Controlled diode. It operates with a collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage of 2.0 V at 25°C and 2.5 V at 175°C junction temperature. It supports a maximum junction temperature of 175°C and offers a short circuit withstand time of 10 µs. The component utilizes PG-TO247-3-46 package.
Feature Summary
- High efficiency in hard switching and resonant topologies
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery full current anti-parallel diode
Applications
- Industrial UPS
- Charger
- Energy Storage
- Three-level Solar String Inverter
- Welding
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compliance with JEDEC qualification standards for industrial applications. Confirm thermal interface material requirements are met for optimal heat dissipation within the specified operating temperature range.
Selection Notes
Select this component for high-speed switching applications requiring low switching losses. Consider the 10 µs short circuit withstand time for robust fault protection. Evaluate gate resistor values to optimize switching energy losses based on the provided characteristic diagrams.
Part Context
This part belongs to the Highspeed switching series third generation IGBT family from Infineon Technologies. It integrates TRENCHSTOP technology with an anti-parallel diode in a single TO-247 package, designed for industrial power conversion systems.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility with other IGBT families without verifying pinout, thermal resistance, and electrical characteristics.
