IKW03N120H2FKSA1

$1.27

Description：IGBT 1200V 9.6A TO247-3
Series：-

SKU:3e0f67999b28 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 9.6A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube,Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：9.6 A
Current - Collector Pulsed (Icm)：9.9 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
Power - Max：62.5 W
Switching Energy：290µJ
Input Type：Standard
Gate Charge：22 nC
Td (on/off) @ 25°C：9.2ns/281ns
Test Condition：800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IKW03N120H2FKSA1

Overview

The IKW03N120H2FKSA1 is a single IGBT from Infineon Technologies utilizing HighSpeed 2-Technology. It features an integrated anti-parallel Emitter Controlled HE diode and operates in a PG-TO-247-3 package. Key electrical parameters include a collector-emitter voltage of 1200V, a continuous collector current of 9.6A at 25°C, and a maximum power dissipation of 62.5W. The device exhibits a turn-off energy of 0.15mJ and a gate charge of 22nC.

Feature Summary

HighSpeed 2-Technology designed for resonant circuits to reduce switching losses
Integrated soft, fast recovery anti-parallel Emitter Controlled HE diode
Temperature stable behavior with parallel switching capability

Applications

Switching Mode Power Supplies (SMPS)
Lamp Ballasts
Zero Voltage Switching (ZVS) Converters

Procurement Notes

Verify the component status as obsolete or end-of-life through official manufacturer channels before procurement planning. Confirm that any available replacement parts meet all original electrical specifications and thermal requirements. Ensure compliance with RoHS standards and JEDEC qualification requirements for the target application environment.

Selection Notes

Select this component for applications requiring optimized turn-off energy at low currents. Consider the specific thermal resistance values for the PG-TO-247-3 package when designing heat sinks. Evaluate the gate charge and internal emitter inductance for high-frequency operation constraints.

Part Context

This part belongs to the IKW03N120H2 family within Infineon's HighSpeed 2 portfolio. It shares characteristics with the IKP03N120H2 but utilizes a different package configuration. The technology focuses on tight parameter distribution and optimized performance for resonant topologies.