IKW30N60TAFKSA1

Description：IGBT TRENCH FS 600V 60A TO247-3
Series：TrenchStop®

SKU:9f91258e944d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 60A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 30A
Power - Max：187 W
Switching Energy：1.46mJ
Input Type：Standard
Gate Charge：167 nC
Td (on/off) @ 25°C：23ns/254ns
Test Condition：400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr)：143 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-21
Grade：-
Qualification：-

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IKW30N60TAFKSA1

Overview

The IKW30N60T is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP™ and Fieldstop technology. It features an integrated soft, fast recovery anti-parallel Emitter Controlled HE diode in a Low Loss DuoPack configuration. The device operates with a maximum collector-emitter voltage of 600V and supports a continuous collector current of 45A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 1.5V, a gate charge of 167nC, and a short circuit withstand time of 5µs. It is housed in a PG-TO247-3 package.

Feature Summary

Integrates a TRENCHSTOP™ IGBT with a soft, fast recovery anti-parallel Emitter Controlled HE diode for low loss performance.
Features very tight parameter distribution and high ruggedness due to Fieldstop technology.
Provides positive temperature coefficient in VCE(sat) for stable parallel operation.
Designed for low electromagnetic interference (EMI) and low gate charge requirements.

Applications

Frequency Converters
Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO247-3 package outline and marking code K30T60. Confirm that the intended application does not require automotive or life-support approval, as these require express written authorization from the manufacturer.

Selection Notes

Select this component for medium-power applications requiring high switching speeds and low conduction losses. The integrated diode simplifies circuit design by eliminating the need for external freewheeling diodes. Consider the thermal resistance values when designing heat sinks, noting the junction-to-case resistance differs between the IGBT and the diode sections.

Part Context

This part belongs to the TRENCHSTOP™ Series, specifically designed for 600V applications. It represents a discrete solution within Infineon's portfolio, offering a balance between switching speed and conduction efficiency. The technology combines trench gate structures with field-stop layers to optimize performance metrics such as saturation voltage and switching energy.