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The IKW40N120CS7XKSA1 is a short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 copacked with a soft and fast recovery Emitter Controlled 7 diode in a PG-TO247-3 package. It features a collector-emitter saturation voltage of 2.0 V at Tvj=175 °C, optimized for hard switching topologies including 2-level inverters and 3-level NPC T-type configurations. The device offers an 8 µsec short circuit withstand time and wide dv/dt controllability.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compatibility with JEDEC47/20/22 industrial application validation standards before integration into final designs.
Select this component for applications requiring high short-circuit ruggedness and optimized hard switching performance. Consider the 2.0 V saturation voltage at elevated temperatures when designing thermal management solutions for industrial drive and solar inverter systems.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It represents an evolution in silicon power semiconductor technology designed to improve efficiency and reliability in medium-power industrial applications through advanced trench gate structures.
Consult official Infineon replacement guides for verified substitutes. Cross-reference electrical parameters and package dimensions carefully when considering alternative components from other manufacturers.