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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
- Power - Max：306 W
- Switching Energy：1.68mJ
- Input Type：Standard
- Gate Charge：223 nC
- Td (on/off) @ 25°C：19ns/197ns
- Test Condition：400V, 40A, 7.9Ohm, 15V
- Reverse Recovery Time (trr)：124 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IKW40N60H3FKSA1 is a high-speed switching series third-generation IGBT in Trench and Fieldstop technology with a soft, fast recovery anti-parallel diode. It features a collector-emitter voltage of 600 V, a DC collector current of 80 A at 25°C, and a saturation voltage of 1.95 V at 25°C. The device supports a maximum junction temperature of 175°C and operates within a -40 to +175°C range. Power dissipation reaches 306 W at 25°C case temperature. It utilizes a PG-TO247-3 package.
Feature Summary
- TRENCHSTOP technology providing very low VCEsat and low EMI
- Very soft, fast recovery anti-parallel diode
- Qualified according to JEDEC for target applications
- Pb-free lead plating and RoHS compliant
Applications
- Uninterruptible power supplies
- Welding converters
- Converters with high switching frequency
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm specific packaging or testing variations. Confirm component authenticity through authorized channels. Check datasheet revision history for updates on electrical characteristics. Ensure thermal management aligns with specified Rth(j-c) values. Validate application suitability against manufacturer guidelines.
Selection Notes
Select based on required switching speed and thermal performance. Consider the integrated diode characteristics for reverse recovery requirements. Evaluate gate charge and internal emitter inductance for drive circuit design. Assess short circuit withstand time capabilities for system protection strategies. Match package type to available mounting infrastructure.
Part Context
This component belongs to Infineon's High Speed Switching Series Third Generation. It integrates an IGBT and a diode in a single TO-247-3 package. The technology combines Trench and Fieldstop designs for optimized performance. It targets industrial power control applications requiring efficient switching.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Verify pinout compatibility and thermal resistance parameters. Ensure replacement parts meet identical voltage and current ratings. Confirm package dimensions match existing PCB layouts.
