IKW50N120CH7XKSA1

$7.73

Description：IGBT TRENCH FS 1200V 86A TO247-3
Series：TRENCHSTOP™

SKU:a6d9ec33947b Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 86A TO247-3
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：86 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
Power - Max：398 W
Switching Energy：2.33mJ (on), 1.12mJ (off)
Input Type：Standard
Gate Charge：375 nC
Td (on/off) @ 25°C：39ns/319ns
Test Condition：-
Reverse Recovery Time (trr)：116 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-U06
Grade：-
Qualification：-

Download product information

IKW50N120CH7XKSA1

Overview

The IKW50N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP IGBT 7 Technology device with an integrated emitter-controlled diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 86 A at 25°C case temperature. The saturation voltage is 1.7 V at 25°C, rising to 2 V at 175°C. Operating junction temperatures range from -40°C to 175°C. The component utilizes PG-TO247-3-STD-NN2.5 packaging.

Feature Summary

Co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled Rapid diode
Optimized for high efficiency in high speed hard switching topologies such as 2-L inverter, 3-L NPC T-type
Easy paralleling capability due to positive temperature coefficient in VCEsat

Applications

Industrial UPS
EV-Charging
String inverter
Welding

Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to ensure correct package variant and marking specifications. Confirm RoHS compliance status and Pb-free lead plating requirements prior to procurement. Cross-reference the datasheet revision history to validate that all electrical parameters match the specific manufacturing batch intended for integration into the design.

Selection Notes

Select this component for applications requiring high-speed hard switching topologies where low reverse recovery charge is critical. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values. Verify that gate drive circuits can accommodate the required gate-emitter threshold voltages and transient limits for reliable operation across the full operating temperature range.

Part Context

This part belongs to the TRENCHSTOP IGBT 7 family, which integrates advanced silicon technology with optimized diode characteristics. The series is designed to improve efficiency in power conversion systems by reducing switching losses. The specific model incorporates a rapid diode co-packaged with the IGBT to minimize reverse recovery effects during commutation cycles.