IKW75N65SS5XKSA1

$11.70

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5

SKU:e26aff731d45 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 75A
Power - Max：395 W
Switching Energy：450µJ (on), 750µJ (off)
Input Type：Standard
Gate Charge：164 nC
Td (on/off) @ 25°C：22ns/145ns
Test Condition：400V, 75A, 5.6Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW75N65SS5XKSA1

Overview

The IKW75N65SS5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 S5 family, co-packed with a full-rated 6th generation CoolSiC diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical characteristics include a typical collector-emitter saturation voltage of 1.35 V and a gate charge of 164 nC. Total switching energy is 1.2 mJ under standard test conditions.

Feature Summary

Combines TRENCHSTOP 5 IGBT technology with a full-rated 6th generation CoolSiC diode for ultra-low switching losses.
Delivers benchmark efficiency in hard switching topologies due to minimized on-state and switching losses.
Designed as a plug-and-play replacement for pure silicon devices while maintaining high thermal performance.

Applications

Industrial Switched-Mode Power Supplies (SMPS)
Industrial Uninterruptible Power Supplies (UPS)
Solar String Inverters
Energy Storage Systems
Chargers

Procurement Notes

Verify component authenticity through authorized Infineon distributors or official channels. Confirm that the specific ordering suffix matches the required package and marking specifications. Ensure compliance with JEDEC qualification standards relevant to the target application environment before finalizing procurement decisions.

Selection Notes

Select this component when high-frequency operation and superior efficiency are critical requirements. The integrated CoolSiC diode eliminates the need for external anti-parallel diodes, simplifying circuit design. Evaluate thermal management strategies to maintain junction temperatures within the specified operational limits during peak load conditions.

Part Context

This device belongs to the TRENCHSTOP 5 S5 product line, representing an evolution in hybrid power semiconductor technology. It integrates silicon-based IGBT structures with silicon carbide diodes to optimize performance metrics such as switching speed and conduction loss, addressing modern industrial power conversion demands.

Replacement Considerations

Officially documented substitutes include IKZA75N65SS5XKSA1 and IKZ75N65EL5XKSA1. Verify pin compatibility and thermal resistance parameters before implementing any cross-replacement in existing designs.

FAQ

Is the IKW75N65SS5 qualified for automotive applications?

No, the datasheet explicitly states that this product is not qualified according to AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.