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The IKWH40N65WR6XKSA1 is a single N-channel IGBT with an integrated monolithic diode, utilizing TRENCHSTOP™ 5 WR6 technology. It features a PG-TO247-3 package with enhanced creepage and clearance distances exceeding 4.8 mm and 3.4 mm respectively. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C case temperature. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.85 V at 25°C and a gate-emitter threshold voltage ranging from 3.2 V to 4.8 V. The component operates within a junction temperature range of -40°C to +175°C.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm RoHS compliance and packaging details. Confirm that the component meets industrial application requirements as per JEDEC standards. Ensure design margins do not exceed 80% of maximum ratings for optimal lifetime. Check for any updates in the datasheet revision history regarding rated values or testing conditions before finalizing procurement specifications.
Select this component for designs requiring high reliability in contaminated environments due to its enhanced creepage and clearance package. The positive temperature coefficient facilitates paralleling multiple units for higher current handling without complex balancing circuits. Consider the thermal resistance characteristics when designing heatsinking solutions. Verify compatibility with standard TO-247 mounting hardware and ensure gate drive voltages remain within the specified ±20 V limit.
This part belongs to the TRENCHSTOP™ 5 family from Infineon Technologies, specifically the WR6 variant designed for robustness. It integrates an IGBT and a fast recovery diode in a single TO-247-3 package. The WR6 designation indicates specialized package geometry for increased insulation distances compared to standard TO-247 packages.
Direct pin-to-pin replacements are not explicitly confirmed in the provided source material. Evaluate alternative TRENCHSTOP™ 5 devices with similar voltage and current ratings, ensuring comparable thermal resistance and switching characteristics. Verify package dimensions and pinout compatibility before substitution.
The internal emitter inductance is 13 nH, measured 5 mm from the case.
No, the product is not qualified according to AEC Q100 or AEC Q101 documents and is intended for industrial applications.
The maximum transient gate-emitter voltage is ±30 V for pulses up to 10 µs with a duty cycle less than 0.01.