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Product Detailed Parameters
- Description：IGBT TRENCH FS 670V 105A TO247-3
- Series：TRENCHSTOP™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：670 V
- Current - Collector (Ic) (Max)：105 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 50A
- Power - Max：246 W
- Switching Energy：980µJ (on), 560µJ (off)
- Input Type：Standard
- Gate Charge：127 nC
- Td (on/off) @ 25°C：18ns/182ns
- Test Condition：400V, 50A, 9.8Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-32
- Grade：-
- Qualification：-
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Overview
The IKWH50N67PR7XKSA1 is a TRENCHSTOP IGBT 7 PR7 Reverse Conducting IGBT designed for boost PFC stages. It features a collector-emitter voltage of 670 V and a continuous collector current of 105 A at 25°C case temperature. The device utilizes a PG-TO247-3-U04 package with high creepage distance exceeding 4.8 mm. Typical saturation voltage is 1.4 V, with switching energies of 0.98 mJ (turn-on) and 0.56 mJ (turn-off).
Feature Summary
- Optimized monolithic diode specifically engineered for Power Factor Correction applications.
- Improved electromagnetic interference behavior characterized by reduced dv/dt rates.
- Positive temperature coefficient of saturation voltage enabling stable parallel switching capabilities.
Applications
- Residential Air Conditioning systems
- Commercial Air Conditioning systems
- Residential HVAC units
- Commercial HVAC units
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package variant and tape-and-reel specifications. Confirm industrial qualification status via JEDEC standards before integration into final designs. Ensure gate driver compatibility with the required isolation levels for the intended application environment.
Selection Notes
Select this component for high-power boost PFC applications requiring improved EMI characteristics. The integrated reverse-conducting diode eliminates external components, simplifying circuit topology. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected operating conditions.
Part Context
This device belongs to the TRENCHSTOP IGBT 7 family, representing advanced silicon technology for power conversion. It integrates an anti-parallel diode within a single TO-247-3 package, reducing system footprint. The product spectrum includes various voltage ratings tailored for industrial drive and renewable energy applications.
Replacement Considerations
Direct pin-to-pin replacements are not explicitly listed in the provided datasheet. Verify electrical parameter compatibility and thermal performance when considering alternative manufacturers or previous generation Infineon products for existing designs.
