IKZA40N65RH5XKSA1

Overview

The IKZA40N65RH5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 H5 family, co-packed with a half-rated 6th generation CoolSiC Schottky diode. It features a 650 V collector-emitter voltage and a 40 A continuous collector current at 25°C case temperature. The device utilizes a PG-TO247-4-3 package with a Kelvin emitter pin to minimize internal inductance. Key electrical parameters include a maximum power dissipation of 250 W at 25°C, a typical collector-emitter saturation voltage of 1.65 V, and a gate charge of 95 nC. Operating junction temperatures range from -40°C to +175°C.

Feature Summary

• Combines TRENCHSTOP 5 IGBT technology with a half-rated 6th generation CoolSiC diode for ultra-low switching losses.
• Features a four-pin TO-247 package with an optimized pin-out and increased clearance between Kelvin emitter and gate pins.
• Designed as a plug-and-play replacement for pure silicon devices to simplify PCB design and improve wave soldering quality.
• Achieves benchmark efficiency in hard switching topologies through reduced parasitic inductance.

Applications

• Industrial Switched-Mode Power Supplies (SMPS)
• Industrial Uninterruptible Power Supplies (UPS)
• Solar string inverters
• Energy storage systems
• Chargers

Procurement Notes

Verify the specific ordering suffix XKSA1 against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets JEDEC qualification requirements for the intended target applications. Check for any updates regarding product lifecycle status or recommended design-in notices before finalizing procurement specifications.

Selection Notes

Select this component when high-frequency hard switching performance is required in industrial power conversion. The integrated CoolSiC diode reduces reverse recovery losses compared to standard silicon alternatives. Ensure thermal management solutions support the specified junction temperature limits and power dissipation ratings under worst-case operating conditions.

Part Context

This part belongs to Infineon's CoolSiC hybrid discrete portfolio, merging silicon IGBTs with silicon carbide diodes. It represents the TRENCHSTOP 5 H5 generation, focusing on minimizing switching energy while maintaining robustness. The four-pin configuration distinguishes it from traditional three-pin IGBTs by providing a dedicated Kelvin emitter for precise gate drive control.

Replacement Considerations

IKZA40N65RH5