IKZA50N65EH7XKSA1

Overview

The IKZA50N65EH7XKSA1 is a single IGBT with an integrated anti-parallel diode, utilizing Infineon's TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25 °C. The device operates within a junction temperature range of -40 °C to +175 °C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.65 V and a gate-emitter voltage limit of ±20 V. The component is housed in a PG-TO247-4 package.

Feature Summary

• Employs TRENCHSTOP™ IGBT7 technology for optimized hard switching performance.
• Integrates a soft, fast recovery emitter-controlled diode for smooth switching behavior.
• Designed with humidity robustness for industrial application environments.

Applications

• Industrial UPS systems
• EV-Charging infrastructure
• String inverters
• Welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and marking configurations. Confirm that the procurement channel provides valid traceability and authenticity guarantees. Ensure compliance with JEDEC qualification standards required for the intended industrial deployment context.

Selection Notes

Select this component for designs requiring low saturation voltage and high-speed switching capabilities. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the integrated diode characteristics when designing snubber circuits or freewheeling paths for inductive loads.

Part Context

This discrete semiconductor belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It represents a silicon-based power switch designed to replace older generation IGBTs in medium-power applications. The product line focuses on improving efficiency through reduced switching losses and enhanced reliability metrics.

Replacement Considerations

IKZA50N65EH7