SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IMZ1AS_S1_00001 is a complementary dual general-purpose transistor manufactured by Panjit International Inc. It integrates a PNP (Tr1) and an NPN (Tr2) transistor within a single SOT-23 6L package. The device supports a collector current of ±150 mA and operates with collector-emitter voltages up to ±60 V. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 560 at 1 mA, transition frequencies of 140 MHz for the PNP and 180 MHz for the NPN, and a total power dissipation of 300 mW. The component functions reliably across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The IMZ1AS_S1_00001 variant is supplied on a 7-inch reel containing 3000 pieces. Confirm that the halogen-free green molding compound meets project environmental requirements before finalizing procurement orders.
Select this component when a matched complementary pair is required for space-constrained designs. Ensure the application stays within the 300 mW total power dissipation limit. Verify that the ±150 mA collector current rating accommodates peak load requirements without exceeding thermal resistance limits.
This part belongs to the PIMZ1AS series of complementary dual general-purpose transistors. It serves as a discrete solution for replacing separate PNP and NPN components, simplifying PCB layout while maintaining matched electrical characteristics between the two integrated transistors.
Direct substitutes include other complementary dual transistors in the SOT-23 6L package such as the MMBT3904/3906 or BC847/BC857 pairs, provided pinout compatibility and voltage ratings are verified.