IMZ1AS_S1_00001

IMZ1AS_S1_00001

$0.28
  • Description:TRANS NPN/PNP 60V 150MA SOT-23-6
  • Series:-

SKU:daa6d2a5e918 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 60V 150MA SOT-23-6
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:180MHz, 140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-23-6
  • Grade:-
  • Qualification:-

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IMZ1AS_S1_00001

Overview

The IMZ1AS_S1_00001 is a complementary dual general-purpose transistor manufactured by Panjit International Inc. It integrates a PNP (Tr1) and an NPN (Tr2) transistor within a single SOT-23 6L package. The device supports a collector current of ±150 mA and operates with collector-emitter voltages up to ±60 V. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 560 at 1 mA, transition frequencies of 140 MHz for the PNP and 180 MHz for the NPN, and a total power dissipation of 300 mW. The component functions reliably across a temperature range of -55°C to +150°C.

Feature Summary

  • Complementary dual configuration integrating matched PNP and NPN transistors in a compact surface-mount package
  • Designed specifically for low-power amplification and switching applications
  • Manufactured using silicon epitaxial technology with lead-free construction compliant with EU RoHS 2.0 standards

Applications

  • Low power amplification circuits
  • General purpose switching applications
  • Complementary push-pull output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The IMZ1AS_S1_00001 variant is supplied on a 7-inch reel containing 3000 pieces. Confirm that the halogen-free green molding compound meets project environmental requirements before finalizing procurement orders.

Selection Notes

Select this component when a matched complementary pair is required for space-constrained designs. Ensure the application stays within the 300 mW total power dissipation limit. Verify that the ±150 mA collector current rating accommodates peak load requirements without exceeding thermal resistance limits.

Part Context

This part belongs to the PIMZ1AS series of complementary dual general-purpose transistors. It serves as a discrete solution for replacing separate PNP and NPN components, simplifying PCB layout while maintaining matched electrical characteristics between the two integrated transistors.

Replacement Considerations

Direct substitutes include other complementary dual transistors in the SOT-23 6L package such as the MMBT3904/3906 or BC847/BC857 pairs, provided pinout compatibility and voltage ratings are verified.

IMZ1AS_S1_00001IMZ1AS_S1_00001
$0.28
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