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IPB015N08N5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 180A TO263-7. Review the specifications below when checking this part for your BOM.
The IPB015N08N5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a maximum drain-source voltage of 80 V and a typical on-resistance of 1.5 mΩ at VGS=10 V. It supports a continuous drain current of 260 A at TC=25 °C and a pulsed current of 1040 A. The device features a total gate charge of 178 nC, output charge of 207 nC, and a thermal resistance junction-to-case of 0.4 K/W. It utilizes a PG-TO263-7 (D²-PAK 7pin) package.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements as defined in IEC61249-2-21. Ensure the application design accounts for the specified absolute maximum ratings regarding temperature and current limits.
Select this component for applications requiring high-frequency switching and synchronous rectification within an 80 V system. The low on-resistance and optimized gate charge make it suitable for efficient DC/DC converter designs. Consider the D²-PAK 7pin package for its thermal performance and mounting options when designing the PCB layout.
This part belongs to the OptiMOS™ 5 family of power transistors from Infineon Technologies. It is designed for industrial applications and offers enhanced performance compared to previous generations. The device is qualified according to JEDEC standards for target applications and is available in a lead-free plating finish.
IPB015N08N5
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