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IPG16N10S461ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 16A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG16N10S4-61 is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 100 V and a continuous drain current of 16 A per channel at 25 °C. The device has a maximum on-state resistance of 61 mΩ at VGS=10 V. It supports an operating temperature range from -55 °C to +175 °C, offers a thermal resistance junction-to-case of 5.2 K/W, and includes avalanche testing compliance.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm that the component meets the required automotive quality standards and environmental compliance criteria before finalizing procurement orders.
Select this component for designs requiring dual N-channel switching within a limited footprint. Ensure the gate drive voltage aligns with the specified threshold characteristics. Evaluate the thermal management strategy to maintain junction temperatures within the rated operational limits during high-current conditions.
This part belongs to the OptiMOS-T2 family, which utilizes trench technology for optimized power loss and switching speed. The series is designed for automotive reliability, offering low on-resistance and high ruggedness compared to standard MOSFETs.
Check for direct substitutes within the same OptiMOS-T2 family or other Infineon dual N-channel devices with matching voltage and current ratings. Verify pin compatibility and thermal characteristics when considering alternative packages.
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