FET, MOSFET Arrays IPG16N10S461ATMA1 product image

IPG16N10S461ATMA1

$1.57
  • Description:MOSFET 2N-CH 100V 16A 8TDSON
  • Series:OptiMOS™

SKU:2f12326600f7 Category: Brand:

  
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IPG16N10S461ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 16A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG16N10S461ATMA1

  • Description:MOSFET 2N-CH 100V 16A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:16A
  • Rds On (Max) @ Id, Vgs:61mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 9µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:490pF @ 25V
  • Power - Max:29W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-4
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG16N10S461ATMA1

IPG16N10S461ATMA1

FET, MOSFET Arrays Overview

The IPG16N10S4-61 is a dual N-channel enhancement mode power transistor from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 100 V and a continuous drain current of 16 A per channel at 25 °C. The device has a maximum on-state resistance of 61 mΩ at VGS=10 V. It supports an operating temperature range from -55 °C to +175 °C, offers a thermal resistance junction-to-case of 5.2 K/W, and includes avalanche testing compliance.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration in a compact surface-mount package
  • Qualified for automotive applications under AEC-Q101 standards
  • High thermal stability supporting operation up to 175 °C
  • Validated avalanche energy capability for robust performance

FET, MOSFET Arrays Applications

  • Automotive electronic control units
  • Motor drive circuits
  • Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm that the component meets the required automotive quality standards and environmental compliance criteria before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching within a limited footprint. Ensure the gate drive voltage aligns with the specified threshold characteristics. Evaluate the thermal management strategy to maintain junction temperatures within the rated operational limits during high-current conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, which utilizes trench technology for optimized power loss and switching speed. The series is designed for automotive reliability, offering low on-resistance and high ruggedness compared to standard MOSFETs.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the same OptiMOS-T2 family or other Infineon dual N-channel devices with matching voltage and current ratings. Verify pin compatibility and thermal characteristics when considering alternative packages.

IPG16N10S461ATMA1IPG16N10S461ATMA1
$1.57
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