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IPG20N10S4L22AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 100V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N10S4L-22A is a dual N-channel OptiMOS-T2 power transistor in a PG-TDSON-8-10 package. It features a 100 V drain-source voltage and a maximum on-state resistance of 22 mΩ at VGS=10V. The device supports a continuous drain current of 20 A per channel and withstands pulsed currents up to 80 A. It operates within a temperature range of -55°C to +175°C, with a thermal resistance junction-to-case of 2.5 K/W. The component is AEC-Q101 qualified and includes avalanche testing.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compatibility with standard surface mount reflow profiles. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement specifications.
Select this component for designs requiring high current density in a compact footprint. Evaluate the 22 mΩ RDS(on) against thermal constraints for the target application. Consider the dual-channel architecture for bridge or parallel configurations. Verify gate drive requirements align with the specified threshold voltage characteristics.
This part belongs to the OptiMOS-T2 family from Infineon Technologies. It utilizes silicon planar trench technology optimized for automotive reliability. The PG-TDSON-8-10 package provides efficient heat dissipation through exposed copper pads. It serves as a robust solution for high-efficiency switching applications.
Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the PG-TDSON-8-10 footprint and pinout. Verify that alternative components meet the same AEC-Q101 qualification standards and thermal performance metrics.
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