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IPN50R650CEATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 9A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPN50R650CEATMA1
- Description：MOSFET N-CH 500V 9A SOT223
- Series：CoolMOS™ CE
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：13V
- Rds On (Max) @ Id, Vgs：650mOhm @ 1.8A, 13V
- Vgs(th) (Max) @ Id：3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：342 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：5W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-3
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for IPN50R650CEATMA1
Single FETs, MOSFETs Overview
The IPN50R650CEATMA1 is a 500V N-channel enhancement-mode Power MOSFET from Infineon's CoolMOS CE series. It utilizes superjunction technology and is housed in a PG-SOT223 surface-mount package. Key electrical parameters include a maximum drain-source voltage of 550V, a continuous drain current of 9A at 25°C case temperature, and a maximum on-state resistance of 0.65Ω. The device features a typical gate charge of 15nC and supports a pulsed drain current of 19A.
Single FETs, MOSFETs Feature Summary
- Superjunction structure for low switching losses
- High commutation ruggedness
- Lead-free plating and halogen-free compound
Single FETs, MOSFETs Applications
- Power adapters
- Chargers
- Lighting systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against official documentation to ensure correct suffix alignment. Confirm that the component meets standard grade requirements for target applications. Check datasheet revision history for updates regarding ratings or thermal characteristics before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for cost-sensitive consumer and lighting designs requiring high efficiency. Ensure the application operates within the specified junction temperature range of -40°C to 150°C. Consider the thermal resistance values when designing PCB copper areas for adequate heat dissipation under load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS CE platform, optimized for price-performance in consumer electronics. It offers fast switching capabilities comparable to higher-end Superjunction MOSFETs while maintaining ease of drive. The PG-SOT223 package provides a compact solution for surface-mount assembly.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference tools for verified substitutes. Verify pinout compatibility and thermal performance metrics when evaluating alternative components.
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