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IQE008N03LM5CGSCATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 9WHTFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IQE008N03LM5CGSCATMA1
- Description：MOSFET 2N-CH 30V 9WHTFN
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：9-PowerWDFN
- Supplier Device Package：PG-WHTFN-9
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IQE008N03LM5CGSCATMA1
FET, MOSFET Arrays Overview
The IQE008N03LM5CGSCATMA1 is an N-channel OptiMOS 5 power transistor with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 0.85 mΩ at VGS=4.5 V and supports a continuous drain current of 252 A at TC=25 °C. The device utilizes a PG-WHTFN-9 package, providing dual-side cooling capabilities with thermal resistances of 1.4 °C/W (junction-to-case bottom) and 0.7 °C/W (junction-to-case top). Total gate charge is 30 nC at VGS=4.5 V and 64 nC at VGS=10 V.
FET, MOSFET Arrays Feature Summary
- Logic-level operation optimized for low gate drive voltages
- Superior thermal resistance via dual-side cooling structure
- 100% avalanche tested for robustness in inductive switching
FET, MOSFET Arrays Applications
- Synchronous rectification in high-performance SMPS
- Industrial motor control applications
- DC-DC converter stages requiring low conduction losses
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with PG-WHTFN-9 footprint requirements during PCB layout. Confirm industrial qualification status per JEDEC standards for intended operating environments.
FET, MOSFET Arrays Selection Notes
Select this component for designs prioritizing low RDS(on) at logic-level gate drives. Evaluate thermal management strategies utilizing both top and bottom cooling surfaces. Consider the 30 V rating and 252 A current capability relative to peak load requirements and ambient temperature derating curves.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS 5 family, designed for low-voltage power switching. It integrates advanced trench technology within a source-down center-gate configuration. The series targets efficiency improvements in compact power conversion systems through reduced switching and conduction losses.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with IQE008N03LM5CGSC for identical electrical characteristics. Verify pinout compatibility with PG-WHTFN-9 packages before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
