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IRC630PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 9A TO220-5. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRC630PBF
- Description：MOSFET N-CH 200V 9A TO220-5
- Series：HEXFET®
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 25 V
- FET Feature：Current Sensing
- Power Dissipation (Max)：74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-5
- Package / Case：TO-220-5
Single FETs, MOSFETs datasheet and documents for IRC630PBF
Single FETs, MOSFETs Overview
The IRC630PBF is a single N-channel HEXFET power MOSFET manufactured by Vishay Siliconix. It utilizes advanced planar strip technology to achieve exceptionally low on-resistance and fast switching speeds. The device is housed in a TO-220AB package with the case connected to the drain for efficient thermal management. Key electrical specifications include a drain-source voltage of 200 V, a continuous drain current of 18 A, and a maximum on-resistance of 0.4 ohms. It operates within a temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Advanced planar strip technology provides low on-resistance and fast switching performance.
- Case is electrically connected to the drain terminal for effective heat dissipation.
- Designed for high-voltage applications requiring robust avalanche energy handling.
Single FETs, MOSFETs Applications
- High-frequency power switching circuits
- DC-to-DC converters
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation matches Vishay Siliconix or International Rectifier history. Confirm the package type is TO-220AB and the suffix PBF indicates lead-free compliance. Ensure the part number corresponds to the 18 Amp rating variant rather than the standard IRF630 9 Amp version.
Single FETs, MOSFETs Selection Notes
Select this component when higher current capacity than the standard IRF630 is required. The 18 Amp rating supports demanding load conditions. Verify that the circuit design accommodates the specific gate charge and threshold voltage characteristics documented in the official datasheet.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs known for high reliability. It serves as a higher-current alternative to similar 200V devices. The TO-220AB form factor allows for straightforward through-hole mounting on printed circuit boards.
Single FETs, MOSFETs Replacement Considerations
The IRF630PBF is a related device but offers only 9 Amps continuous current. Direct substitution requires verifying if the lower current rating meets the application requirements. No other direct equivalent part numbers are confirmed in the provided documentation.
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