IRF3707SPBF

Description：MOSFET N-CH 30V 62A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:aa86de24e990 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF3707SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 62A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF3707SPBF

Description：MOSFET N-CH 30V 62A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1990 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：87W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF3707SPBF

IRF3707SPBF

Single FETs, MOSFETs Overview

The IRF3707SPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D2PAK (TO-262) surface-mount package with a drain-source voltage rating of 30V and a continuous drain current of 62A at 25°C case temperature. The device exhibits a maximum on-resistance of 12.5mΩ at VGS=10V and 17mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 19nC, an avalanche energy rating of 213mJ, and a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Ultra-low gate impedance for efficient switching performance
Very low RDS(on) across standard drive voltages
Fully characterized avalanche voltage and current capabilities

Single FETs, MOSFETs Applications

High frequency DC-DC isolated converters with synchronous rectification for telecom and industrial use
High frequency buck converters for computer processor power

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against official Infineon or International Rectifier documentation. Confirm the specific D2PAK package marking and lead-free status indicated by the PbF suffix. Ensure thermal management designs account for the specified junction-to-ambient resistance values under actual PCB mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust avalanche ruggedness and high current handling in a compact surface-mount form factor. Evaluate the thermal dissipation requirements based on the 87W maximum power dissipation rating at 25°C case temperature. Consider the 30V voltage headroom relative to system operating limits.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies, originally developed by International Rectifier. The 'S' designation identifies the D2PAK (TO-262) surface-mount package variant, distinct from through-hole options like the TO-220AB. The 'PbF' suffix denotes compliance with lead-free manufacturing standards.