ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF40H233XTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 8TDSON. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF40H233XTMA1
- Description：MOSFET 2N-CH 40V 8TDSON
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PG-TDSON-8-900
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF40H233XTMA1
FET, MOSFET Arrays Overview
The IRF40H233XTMA1 is a dual N-channel StrongIRFET power MOSFET housed in a SuperSO8 5x6 surface-mount package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 35 A at 25°C case temperature. The device exhibits a maximum on-resistance of 6.2 mΩ at 10 V gate drive, with typical gate charges of 16 nC for Qgd and 35 nC for Qg. Thermal performance includes a junction-to-case resistance of 45 K/W and a maximum operating junction temperature of 175 °C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration integrated within a single symmetrical SuperSO8 package
- StrongIRFET technology optimized for low conduction losses and high efficiency
- Enhanced thermal management capabilities supporting operation up to 175 °C
FET, MOSFET Arrays Applications
- Low-voltage motor drive systems
- Synchronous rectification circuits
- DC-DC converter modules
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix XTMA1 to confirm tape-and-reel packaging quantities and handling specifications. Ensure compatibility with standard SMD reflow soldering profiles for the SuperSO8 footprint. Cross-reference official Infineon documentation for RoHS compliance status and recommended storage conditions prior to assembly.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring compact dual-channel integration with moderate voltage ratings. Evaluate the 6.2 mΩ on-resistance against system conduction loss requirements. Confirm that the 45 K/W thermal resistance aligns with the available heatsinking or PCB copper area constraints for the intended duty cycle.
FET, MOSFET Arrays Part Context
This part belongs to Infineon's StrongIRFET family, designed to balance switching speed and conduction efficiency. The SuperSO8 package provides a small form factor suitable for dense PCB layouts. It serves as an alternative to discrete dual MOSFET solutions, reducing board space and parasitic inductance in synchronous applications.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 40 V rating, SuperSO8 5x6 footprint, and comparable RDS(on) and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
