IRF5810TRPBF

FET, MOSFET Arrays Overview

The IRF5810TRPBF is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TSOP-6 surface-mount package containing two independent die. The device supports a drain-source voltage of -20 V and continuous drain currents of -2.9 A at 25°C and -2.3 A at 70°C. Maximum on-resistance is specified as 90 mΩ at VGS = -4.5V and 135 mΩ at VGS = -2.5V. Power dissipation reaches 0.96 W at 25°C, with a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration in a compact TSOP-6 package for space-constrained designs
• Ultra-low on-resistance achieved through advanced processing techniques
• Low gate charge characteristics for efficient switching performance
• Lead-free and halogen-free construction compliant with environmental standards

FET, MOSFET Arrays Applications

• Battery management systems
• Load management applications
• Surface mount circuit design requiring high functionality in small footprints

FET, MOSFET Arrays Procurement Notes

Verify the component matches the specific IRF5810TRPBF designation from Infineon or International Rectifier. Confirm the datasheet version aligns with the required electrical parameters, particularly the -20V rating and TSOP-6 packaging. Ensure the supplier provides traceability documentation consistent with lead-free manufacturing standards.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required within a limited board area. The TSOP-6 package offers a smaller footprint compared to two separate SOT-23 packages while maintaining similar current handling capabilities. Consider the thermal derating requirements for operation above 25°C ambient temperature.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs known for low on-resistance per silicon area. Originally produced by International Rectifier, the product line was integrated into Infineon Technologies following corporate acquisitions. The TSOP-6 package is specifically designed to maximize functionality while minimizing printed circuit board space usage.

FET, MOSFET Arrays Replacement Considerations

IRF5810PBF

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at elevated temperatures?

The continuous drain current decreases to -2.3 A at an ambient temperature of 70°C when VGS is maintained at -4.5V.

How does the package design benefit space-constrained applications?

The dual TSOP-6 package integrates two dies, providing the functionality of two SOT-23 packages in a significantly smaller footprint.

What are the gate threshold voltage limits?

The gate threshold voltage ranges from a minimum of -0.45 V to a maximum of -1.2 V under standard test conditions.