IRF7104TRPBF

$1.13

Description：MOSFET 2P-CH 20V 2.3A 8SO
Series：HEXFET®

SKU:ec96a426c7d6 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7104TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7104TRPBF

Description：MOSFET 2P-CH 20V 2.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：290pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7104TRPBF

IRF7104TRPBF

FET, MOSFET Arrays Overview

The IRF7104TRPBF is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a SO-8 surface-mount package and operates with a drain-source breakdown voltage of -20 V and a continuous drain current of -2.3 A. The device exhibits a maximum on-resistance of 250 mOhms at a gate-source voltage of -10 V. It supports a gate-source voltage range of ±12 V, has a total gate charge of 9.3 nC, and dissipates up to 2 W of power. The component functions within an ambient temperature range of -55 °C to +150 °C junction temperature.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration in a compact SO-8 package
Logic-level compatible for direct microcontroller drive
Low on-resistance for efficient power switching
Fast switching characteristics suitable for high-frequency applications

FET, MOSFET Arrays Applications

DC-DC converter circuits
Power management modules
Battery protection systems
Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPBF to confirm reel packaging specifications. Confirm RoHS compliance status and lead-free material declarations against the latest manufacturer datasheet. Ensure the component matches the intended thermal and electrical requirements for the target application environment before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel switching in a small footprint. Evaluate the 250 mOhm on-resistance against thermal dissipation limits. Consider the -20 V rating for low-voltage logic interfacing. Verify that the SO-8 package aligns with available PCB space and soldering capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. It utilizes silicon technology optimized for general-purpose switching. The dual configuration allows for bridge or half-bridge topologies within a single package, reducing board area compared to discrete single-channel alternatives.