FET, MOSFET Arrays IRF7307TRPBF product image

IRF7307TRPBF

$0.74
  • Description:MOSFET N/P-CH 20V 5.2A/4.3A 8SO
  • Series:HEXFET®

SKU:d14ec60ca87b Category: Brand:

  
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IRF7307TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 5.2A/4.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7307TRPBF

  • Description:MOSFET N/P-CH 20V 5.2A/4.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A, 4.3A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:660pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7307TRPBF

IRF7307TRPBF

FET, MOSFET Arrays Overview

The IRF7307TRPBF is a dual-channel enhancement-mode MOSFET from Infineon’s HEXFET series, housed in an SOIC-8 surface-mount package. It integrates one N-channel and one P-channel transistor within a single isolated component. The device supports a drain-source voltage of 20 V and a maximum continuous drain current of 6.6 A. Key electrical parameters include a typical on-resistance of 29 mΩ, a gate charge of 18 nC, and a power dissipation rating of 2 W. It operates reliably across a temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Combines complementary N-channel and P-channel transistors in a single compact package for space-efficient designs.
  • Features low on-resistance to minimize conduction losses in switching applications.
  • Provides high thermal stability with an extended operating temperature range up to 150°C.

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Motor control bridge circuits
  • Power management modules requiring dual polarity switching

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF confirms tape-and-reel packaging when sourcing. Confirm the 20V rating aligns with system requirements, as similar part numbers may offer higher voltages. Check RoHS compliance documentation for environmental regulations. Ensure the SOIC-8 footprint matches PCB layout constraints. Validate supply chain authenticity through authorized distributors.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required for half-bridge or full-bridge topologies. Compare on-resistance and gate charge against alternatives like the IRF7317 if lower voltage drop or faster switching is needed. Consider the 2W power dissipation limit for thermal management design. Verify that the 20V rating suffices for the target application voltage levels.

FET, MOSFET Arrays Part Context

This part belongs to Infineon’s HEXFET family, known for optimized silicon performance. The IRF7307 series specifically targets low-voltage, high-current applications. It shares the SOIC-8 form factor with other dual MOSFETs but differs in voltage ratings and channel configurations compared to single-channel variants.

FET, MOSFET Arrays Replacement Considerations

The IRF7307PBF is a tube-packaged equivalent. The IRF7317TRPBF offers similar dual N/P configuration but with a 12V gate drive limit. Verify pin compatibility and electrical specifications before substitution.

IRF7307TRPBFIRF7307TRPBF
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