FET, MOSFET Arrays IRF7314TRPBF product image

IRF7314TRPBF

$1.20
  • Description:MOSFET 2P-CH 20V 5.3A 8SO
  • Series:HEXFET®

SKU:cb884799b7bd Category: Brand:

  
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IRF7314TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 5.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7314TRPBF

  • Description:MOSFET 2P-CH 20V 5.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.3A
  • Rds On (Max) @ Id, Vgs:58mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:780pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7314TRPBF

IRF7314TRPBF

FET, MOSFET Arrays Overview

The IRF7314TRPBF is a dual P-Channel Power MOSFET from Infineon Technologies, housed in an SOIC-8 surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 2.5 A. The device exhibits a maximum on-resistance (Rds(on)) of 98 mΩ at Vgs = -4.5 V and 65 mΩ at Vgs = -10 V. Gate-source voltage limits are ±20 V, with a typical gate charge of 12 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 1 W.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration providing two independent switching channels within a single compact package.
  • Logic-level gate drive capability allowing direct interface with standard logic outputs for efficient control.
  • Enhanced performance through Generation V technology, optimizing the balance between low on-resistance and fast switching speeds.

FET, MOSFET Arrays Applications

  • Power management circuits requiring dual-channel P-Channel switching
  • Load switch applications for portable electronics
  • DC/DC converter input/output stages

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number against official Infineon documentation to ensure authenticity. Confirm that the suffix TRPBF indicates tape-and-reel packaging and RoHS compliance. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-Channel solution is required for low-voltage applications up to 30 V. Consider the 98 mΩ on-resistance at -4.5 V gate drive if interfacing directly with 3.3 V or 5 V logic systems. Ensure the thermal design accommodates the 1 W power dissipation limit in the SOIC-8 package under expected operating conditions.

FET, MOSFET Arrays Part Context

This device belongs to the IRF73xx series of dual MOSFETs from Infineon Technologies, formerly International Rectifier. The series utilizes Generation V technology to deliver improved efficiency in small packages. The IRF7314 specifically focuses on P-Channel functionality, complementing N-Channel variants like the IRF7313 for complementary bridge or high-side switching designs.

FET, MOSFET Arrays Replacement Considerations

IRF7313TRPBF: Dual N-Channel variant with similar voltage and current ratings but opposite polarity. IRF7389TRPBF: Dual N/P-Channel combination offering both polarities in one package. IRF7304TRPBF: Single P-Channel alternative with lower current capacity.

IRF7314TRPBFIRF7314TRPBF
$1.20
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