IRF7316GTRPBF

$0.64

Description：MOSFET 2P-CH 30V 4.9A 8SO
Series：HEXFET®

SKU:9289356db9c1 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7316GTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 4.9A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7316GTRPBF

Description：MOSFET 2P-CH 30V 4.9A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.9A
Rds On (Max) @ Id, Vgs：58mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：710pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7316GTRPBF

IRF7316GTRPBF

FET, MOSFET Arrays Overview

The IRF7316GTRPBF is a dual N-channel power MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vds) of -30 V and a continuous drain current (Id) of -4.9 A at 25°C, reducing to -3.9 A at 70°C. The device has a maximum gate-source voltage (Vgs) of ±20 V and an on-resistance (Rds(on)) of 46 mΩ. It utilizes an SOIC-8 surface mount package with a power dissipation rating of 2 W. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a compact SOIC-8 package
Low on-resistance for efficient power switching
Enhanced thermal performance with high junction temperature capability

FET, MOSFET Arrays Applications

DC-DC converter circuits
Power management modules
Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'G' against official Infineon documentation to confirm it denotes the correct tape-and-reel packaging variant. Ensure the component matches the required -30V / -4.9A specifications for your design. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the official datasheet before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required for low-voltage, high-current applications. The SOIC-8 package offers a balance between power handling and board space efficiency. Consider the -4.9A current rating and 2W power dissipation limits for thermal management. Verify that the -30V breakdown voltage meets the circuit requirements.

FET, MOSFET Arrays Part Context

This component belongs to the IRF731 family of dual MOSFETs from Infineon Technologies. It is designed for surface-mount technology (SMD/SMT) applications. The device integrates two N-channel transistors into a single package, providing a compact solution for bridge configurations or synchronous rectification.