IRF7319PBF

FET, MOSFET Arrays Overview

The IRF7319PBF is a dual-channel power MOSFET manufactured by Infineon Technologies, integrating one N-channel and one P-channel enhancement-mode transistor within a single SOIC-8 surface-mount package. The device utilizes silicon technology and operates with a drain-source breakdown voltage of 30 V. It supports a continuous drain current of 6.5 A at 25°C ambient temperature. Key electrical characteristics include a maximum on-resistance of 46 mΩ at 4.5 V gate drive and 29 mΩ at 10 V gate drive for the N-channel, with a gate-source voltage limit of ±20 V. The component features a logic-level threshold voltage of 1 V and a total gate charge of 22 nC. It is designed for operation across a junction temperature range from -55°C to +150°C with a power dissipation rating of 2 W.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel enhancement-mode MOSFETs in a compact dual configuration.
• Features low on-resistance optimized for logic-level gate drive voltages to minimize conduction losses.
• Provides robust thermal performance with a high maximum junction temperature rating for reliable operation.
• Designed for surface-mount installation using standard SOIC-8 packaging.

FET, MOSFET Arrays Applications

• DC/DC converter circuits requiring synchronous rectification or half-bridge topologies.
• Motor control applications involving low-voltage DC motors.
• Power management systems for portable electronic devices.
• Load switching and power distribution units in industrial equipment.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the ordered part matches the required RoHS compliance status and automotive qualification if applicable. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution for both high-side and low-side switching is required in low-voltage applications. Consider the 30 V rating and 6.5 A current capability relative to the system's peak load requirements. Evaluate the thermal resistance and power dissipation limits against the expected operating environment to ensure adequate heat sinking or PCB copper area allocation.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET Power MOSFET family from Infineon Technologies, known for combining high current density with low on-resistance. The dual-channel design reduces board space compared to discrete components. It serves as a fundamental building block for power electronics, offering a balance between switching speed and conduction efficiency suitable for various consumer and industrial power stages.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes such as the IRF7317 series or other compatible dual MOSFETs from the same manufacturer family. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original voltage, current, and thermal specifications.