FET, MOSFET Arrays IRF7319TRPBF product image

IRF7319TRPBF

$1.47
  • Description:MOSFET N/P-CH 30V 8SO
  • Series:HEXFET®

SKU:0cbd84de3dda Category: Brand:

  
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IRF7319TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7319TRPBF

  • Description:MOSFET N/P-CH 30V 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7319TRPBF

IRF7319TRPBF

FET, MOSFET Arrays Overview

The IRF7319TRPBF is a dual-channel, enhancement-mode power MOSFET from the Infineon HEXFET series. It integrates one N-channel and one P-channel transistor within an SOIC-8 surface-mount package. The device supports a drain-source voltage of 30 V and delivers a continuous drain current of 6.5 A. Key electrical parameters include a maximum on-resistance of 46 mΩ at 10 V gate drive, a typical gate charge of 22 nC, and a power dissipation rating of 2 W. It operates reliably across a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel transistors in a single compact package for space-constrained designs.
  • Features low on-resistance to minimize conduction losses and improve thermal efficiency in power switching applications.
  • Designed with logic-level gate threshold characteristics suitable for direct interfacing with standard digital control signals.

FET, MOSFET Arrays Applications

  • DC/DC converter circuits requiring synchronous rectification or half-bridge configurations.
  • Motor driver stages utilizing complementary output topologies.
  • Power management modules for portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the package type matches the required SOIC-8 footprint and pinout configuration. Ensure the operating voltage and current ratings align with the specific circuit design requirements before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual complementary MOSFET solution is needed to reduce board space and simplify assembly. The 30 V rating and 6.5 A current capacity make it suitable for low-voltage power distribution systems. Consider the 46 mΩ on-resistance for efficiency optimization in moderate current applications where thermal management is feasible within the 2 W dissipation limit.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for high-performance silicon MOSFET technology. The IRF7319TRPBF specifically addresses the need for integrated dual-channel solutions, replacing discrete N and P-channel pairs. It utilizes standard silicon technology optimized for general-purpose power switching tasks in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

The IRF7313 serves as a functional substitute but contains only N-channel transistors rather than the complementary N/P pair found in the IRF7319TRPBF. Designers must verify if the application requires both polarities or can operate with a single-channel alternative.

IRF7319TRPBFIRF7319TRPBF
$1.47
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