IRF7328TR

FET, MOSFET Arrays Overview

The UMW IRF7328TR is a dual P-channel MOSFET utilizing trench technology, housed in an SOP-8 surface-mount package. It features a drain-source voltage rating of -30 V and a continuous drain current of -8.0 A at 25°C with VGS at -10V. The device exhibits a maximum on-resistance of 21 mΩ at VGS = -10V and 32 mΩ at VGS = -4.5V. Key electrical parameters include a gate threshold voltage range of -1.0 V to -2.5 V, total gate charge of 52 nC typical, and a maximum power dissipation of 2.0 W at 25°C. The junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrating two independent channels within a single compact package.
• Trench technology implementation designed to achieve ultra-low on-resistance for improved efficiency.
• Lead-free construction compliant with environmental standards.

FET, MOSFET Arrays Applications

• Power management circuits requiring dual channel switching.
• Battery protection systems utilizing low-voltage P-channel control.
• Load switch applications in portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against manufacturer documentation to ensure correct package type and delivery mode. Confirm that the requested variant matches the required tape and reel quantity specifications. Cross-reference thermal resistance values with system design constraints to validate performance under intended operating conditions.

FET, MOSFET Arrays Selection Notes

Evaluate the on-resistance requirements against the available gate drive voltages, noting the increase in RDS(on) at lower VGS levels such as -4.5V. Assess the thermal management needs based on the junction-to-ambient thermal resistance and expected power dissipation. Ensure the selected component meets the voltage and current ratings for the specific application environment.

FET, MOSFET Arrays Part Context

This component belongs to the UMW IRF7328 series of dual P-channel MOSFETs. It serves as a surface-mount alternative to through-hole packages, offering space savings while maintaining comparable electrical characteristics. The SOP-8 form factor facilitates automated assembly processes in high-volume manufacturing environments.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter overlaps before considering any cross-referenced components from other manufacturers.