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IRF7331TRPBF-1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 7A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7331TRPBF-1
- Description：MOSFET 2N-CH 20V 7A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1340pF @ 16V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7331TRPBF-1
FET, MOSFET Arrays Overview
The IRF7331TRPbF-1 is a HEXFET power MOSFET in an SO-8 package. It features a 20 V drain-source voltage and a maximum on-resistance of 30 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 7.0 A at 25°C, with a total gate charge of 13 nC. It operates within a junction temperature range of -55 to +150 °C and has a thermal resistance (junction-to-ambient) of 62.5 °C/W.
FET, MOSFET Arrays Feature Summary
- Industry-standard pinout for multi-vendor compatibility
- Compatible with existing surface mount techniques
- RoHS compliant and halogen-free construction
FET, MOSFET Arrays Applications
- General switching applications
- Synchronous rectification
- DC-DC converters
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm tape-and-reel packaging and industrial qualification levels. Ensure that the specific revision history matches the required manufacturing date code. Confirm compliance with RoHS standards and MSL1 moisture sensitivity requirements before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this component when a 20 V rating and low on-resistance are required in a standard SO-8 footprint. Evaluate the 7.0 A continuous current capability against the expected load profile. Consider the 62.5 °C/W thermal resistance for ambient cooling designs. Verify that the 13 nC gate charge aligns with the available driver circuitry capabilities.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar trench technology to achieve low on-resistance and fast switching speeds. The SO-8 package provides a compact form factor suitable for high-density surface-mount assembly.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other HEXFET devices offering similar 20 V ratings and SO-8 packages. Verify that any substitute maintains identical pinout configurations and meets or exceeds the 30 mΩ on-resistance specification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
