IRF7341PBF

FET, MOSFET Arrays Overview

The IRF7341PBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 4.7 A at 25°C case temperature. The device offers ultra-low on-resistance, with a maximum value of 0.065 Ω at VGS = 4.5 V and 0.050 Ω at VGS = 10 V. Total gate charge is typically 24 nC at VGS = 10 V. Thermal resistance from junction to ambient is 62.5 °C/W, and the operating junction temperature range spans from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package
• Ultra-low on-resistance achieved through Fifth Generation HEXFET technology
• Fast switching speed combined with ruggedized device design
• Dynamic dv/dt rating for improved performance during diode recovery

FET, MOSFET Arrays Applications

• Power applications requiring reduced board space through multiple-die capability
• Synchronous rectification circuits
• DC-DC converter designs

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm lead-free status and package dimensions match the SO-8 outline. Ensure sourcing channels provide valid traceability documentation. Cross-reference part numbers carefully to distinguish between standard and tape-and-reel variants.

FET, MOSFET Arrays Selection Notes

Select this component when low conduction losses are critical for efficiency. The logic-level gate drive capability supports direct interfacing with standard control signals. Evaluate thermal management requirements based on the specified junction-to-ambient resistance. Consider the pulsed drain current limits for transient load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the Fifth Generation HEXFET series developed by International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing techniques to minimize on-resistance per silicon area. The SO-8 package includes a customized leadframe designed for enhanced thermal characteristics and compatibility with vapor phase, infrared, or wave soldering processes.

FET, MOSFET Arrays Replacement Considerations

IRF7341G serves as a compatible alternative within the same product family.