IRF7341TR

FET, MOSFET Arrays Overview

The IRF7341TR is a dual N-channel power MOSFET from UMW, utilizing Generation V HEXFET technology in an SOP-8 package. It features ultra-low on-resistance and fast switching capabilities. Key electrical parameters include a drain-source voltage of 55V, continuous drain current of 4.7A at 25°C case temperature, and maximum gate-source voltage of ±20V. The device exhibits a typical total gate charge of 24nC at 10V and a junction-to-ambient thermal resistance of 62.5°C/W. It supports a junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package for space-efficient designs.
• Generation V HEXFET technology providing ultra-low on-resistance per silicon area.
• Fast switching speed combined with ruggedized device design for high efficiency.
• Dynamic dv/dt rating capability for robust performance in demanding applications.

FET, MOSFET Arrays Applications

• Power management modules requiring stable output.
• DC-DC converters for efficient voltage transformation.
• Switching circuits benefiting from low conduction losses.

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm the package type is SOP-8 and the delivery mode matches the ordered quantity requirements. Ensure the supplier provides valid documentation supporting the Generation V technology claims. Cross-reference the part number suffix TR with tape and reel packaging details.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs in a compact form factor. Consider the 55V breakdown voltage and 4.7A continuous current limits for load matching. Evaluate the thermal resistance of 62.5°C/W for heat dissipation needs. Check the gate threshold voltage minimum of 1.0V for compatibility with logic-level drivers.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs known for advanced processing techniques. It is manufactured by UMW (UTD Semiconductor Co., Limited) as indicated in the provided datasheet. The IRF7341 series is designed for surface mount applications, offering improved thermal characteristics through customized leadframes compared to standard packages.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs with similar 55V ratings and SOP-8 packaging. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets or exceeds the required on-resistance and switching speed specifications for the specific application circuit.