IRF7341TRPBFXTMA1

FET, MOSFET Arrays Overview

The IRF7341TRPBFXTMA1 is a dual N-channel HEXFET Power MOSFET in an SO-8 package. It features a Drain-Source Voltage (VDS) of 55 V and a Continuous Drain Current (ID) of 4.7 A at TC = 25°C. The maximum Drain-Source On-Resistance (RDS(on)) is 0.050 Ω at VGS = 10V. Total Gate Charge (Qg) is typically 24 nC at ID = 4.5A. The device supports a Pulsed Drain Current (IDM) of 38 A and has a Junction Temperature Range of -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration for space-efficient power applications
• Ultra-low on-resistance per silicon area utilizing Fifth Generation HEXFET technology
• Fast switching speed with ruggedized device design
• Dynamic dv/dt rating capability

FET, MOSFET Arrays Applications

• Power supply circuits requiring surface mount integration
• DC-DC converter designs
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the XTMA1 suffix against official Infineon documentation to confirm specific reel packaging or assembly site details. Ensure compatibility with vapor phase, infrared, or wave soldering techniques as specified in the datasheet. Confirm that the component meets lead-free requirements if applicable to your manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component for applications needing a dual N-channel MOSFET in an SO-8 package with a 55V voltage rating. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper areas. Verify gate drive voltage requirements against the RDS(on) specifications at 10V and 4.5V to ensure optimal efficiency.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET Power MOSFET family from Infineon Technologies, originally developed by International Rectifier. The SO-8 package utilizes a customized leadframe for enhanced thermal characteristics and multiple-die capability. It is designed for surface mount applications and offers improved board space reduction compared to single-device solutions.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 55V VDS rating, dual N-channel topology, and SO-8 footprint. Verify thermal performance and electrical parameters match the original specifications.