IRF7342TRPBF

$1.53

Description：MOSFET 2P-CH 55V 3.4A 8SO
Series：HEXFET®

SKU:c31e1503cf4e Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7342TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 55V 3.4A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7342TRPBF

Description：MOSFET 2P-CH 55V 3.4A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：3.4A
Rds On (Max) @ Id, Vgs：105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：690pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7342TRPBF

IRF7342TRPBF

FET, MOSFET Arrays Overview

The IRF7342TRPBF is a dual P-channel enhancement-mode MOSFET from the Infineon HEXFET series, housed in an SO-8 surface-mount package. It features a drain-source voltage of -55 V and a continuous drain current of -3.4 A at 25°C. The device utilizes Fifth Generation technology to achieve ultra-low on-resistance, with maximum values of 0.105 Ω at VGS = -10V and 0.170 Ω at VGS = -4.5V. It includes dynamic dv/dt rating capabilities and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration integrated into a single SO-8 package for space-efficient designs.
Fifth Generation HEXFET processing enables extremely low on-resistance per silicon area.
Fast switching speed combined with ruggedized device design for reliable performance.
Dynamic dv/dt rating supports high-speed switching applications.

FET, MOSFET Arrays Applications

Power management circuits requiring efficient dual-channel control
Motor driver interfaces utilizing fast-switching P-channel devices
General-purpose power switching applications

FET, MOSFET Arrays Procurement Notes

Verify that the ordering suffix 'TRPBF' corresponds to the Tape & Reel packaging format as specified in the datasheet base part number table. Confirm lead-free status and RoHS compliance requirements match project specifications. Ensure thermal dissipation calculations account for the specific PCB mounting conditions referenced in the thermal resistance data.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for 55V systems. The SO-8 package offers enhanced thermal characteristics through a customized lead frame. Evaluate gate charge parameters against drive circuit capabilities to optimize switching losses. Consider the linear derating factor for operation above 25°C ambient temperatures.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET Power MOSFET family, specifically designed using advanced processing techniques. The IRF7342 variant focuses on dual P-channel integration within the SO-8 form factor, distinguishing it from single-channel or N-channel counterparts in the broader product line.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific thermal or electrical characteristics of the original component.