IRF7343TRPBF

FET, MOSFET Arrays Overview

The IRF7343TRPBF is a dual N-channel and P-channel enhancement-mode MOSFET from the HEXFET series, manufactured by Infineon Technologies. It utilizes fifth-generation advanced processing technology to achieve ultra-low on-resistance within an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 55 V for both channels. The N-channel supports a continuous drain current of 4.7 A with a maximum on-resistance of 50 mΩ, while the P-channel provides 3.4 A with a maximum on-resistance of 105 mΩ. Both channels operate with a gate-source voltage range of ±20 V and are rated for junction temperatures up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating independent N-channel and P-channel transistors in a single compact package
• Fifth-generation HEXFET process technology designed for extremely low on-resistance per silicon area
• Fully avalanche rated capability ensuring ruggedized device design and reliability

FET, MOSFET Arrays Applications

• H-bridge circuits requiring complementary switching control
• Motor driver modules utilizing dual-polarity power stages
• Power amplifier applications needing efficient dual-channel management

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix TRPBF indicates tape-and-reel packaging suitable for automated assembly. Ensure the procurement source provides valid traceability documentation to guarantee compliance with RoHS standards and original manufacturing specifications.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated N/P channel pairs. The 50 mΩ N-channel resistance offers efficiency advantages over higher resistance alternatives. Verify that the 55 V breakdown voltage aligns with system supply rails. Consider the SOIC-8 thermal performance for the intended power dissipation levels in the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family, characterized by high-speed switching and low conduction losses. The IRF7343 variant specifically addresses applications needing matched dual-channel performance without occupying separate board real estate. It represents a standard solution for mid-voltage power switching tasks in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

IRF7343PBF serves as the tube-packaged equivalent offering identical electrical characteristics. IRF7343QPBF is available for automotive applications requiring AEC-Q100 qualification. Substitutes must match the 55 V rating and SOIC-8 footprint to ensure mechanical compatibility.