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IRF7351PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 8A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7351PBF
- Description：MOSFET 2N-CH 60V 8A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：17.8mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1330pF @ 30V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7351PBF
FET, MOSFET Arrays Overview
The IRF7351PBF is a dual N-channel HEXFET Power MOSFET in an SO-8 package. It features a 60V drain-to-source voltage rating and an 8A continuous drain current at 25°C. The maximum on-resistance is 17.8mΩ at VGS=10V, with a typical gate charge of 24nC. Operating junction temperature ranges from -55°C to +150°C, with a thermal resistance (junction-to-ambient) of 62.5°C/W.
FET, MOSFET Arrays Feature Summary
- Ultra-low gate impedance for efficient switching
- Fully characterized avalanche voltage and current capabilities
- Compatible with standard surface mount assembly techniques
FET, MOSFET Arrays Applications
- Synchronous rectifier MOSFET for isolated DC-DC converters
- Low power motor drive systems
FET, MOSFET Arrays Procurement Notes
Verify the component against official Infineon datasheets to confirm pinout alignment and electrical ratings match system requirements. Ensure the SO-8 package dimensions conform to design constraints. Check for specific manufacturing lot codes or date codes if traceability is required for industrial applications.
FET, MOSFET Arrays Selection Notes
Select this component when low gate impedance and high avalanche ruggedness are critical for the circuit topology. Evaluate the 17.8mΩ on-resistance against thermal dissipation limits within the SO-8 package. Confirm that the 60V breakdown voltage provides adequate headroom for the target operating voltage.
FET, MOSFET Arrays Part Context
This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes Trench MOSFET technology to achieve low on-resistance and fast switching speeds within a compact surface-mount footprint suitable for dense PCB layouts.
FET, MOSFET Arrays Replacement Considerations
IRF7351PBF_15
FET, MOSFET Arrays FAQ
What is the maximum gate-to-source voltage rating?
The maximum gate-to-source voltage is ±20V.
Does the device support unclamped inductive switching?
Yes, the device is fully characterized for avalanche voltage and current, supporting unclamped inductive switching scenarios.
What is the typical total gate charge?
The typical total gate charge is 24nC.
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