IRF7351TRPBF

$1.47

Description：MOSFET 2N-CH 60V 8A 8SO
Series：HEXFET®

SKU:64033943e505 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7351TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 8A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7351TRPBF

Description：MOSFET 2N-CH 60V 8A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：17.8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1330pF @ 30V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7351TRPBF

IRF7351TRPBF

FET, MOSFET Arrays Overview

The IRF7351TRPBF is a dual N-channel HEXFET Power MOSFET in an SO-8 surface-mount package. It features a 60V drain-to-source voltage rating and an 8A continuous drain current at 25°C. The maximum on-resistance is 17.8mΩ at VGS=10V, with a typical total gate charge of 24nC. Operating junction temperature ranges from -55°C to +150°C, with a thermal resistance (junction-to-ambient) of 62.5°C/W.

FET, MOSFET Arrays Feature Summary

Ultra-low gate impedance for efficient switching
Fully characterized avalanche voltage and current ratings
±20V maximum gate-to-source voltage rating

FET, MOSFET Arrays Applications

Synchronous rectifier MOSFET for isolated DC-DC converters
Low power motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the industrial market qualification standards defined in the datasheet before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low gate drive losses and robust avalanche capability. The dual N-channel configuration supports synchronous rectification designs. Evaluate thermal management requirements based on the 62.5°C/W junction-to-ambient resistance for ambient temperature conditions.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes Trench MOSFET technology to achieve low on-resistance and fast switching speeds within a standard SO-8 footprint suitable for automated surface mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 60V rating, 8A current capacity, and SO-8 pinout configuration.