IRF7501TR

$8.57

Description：MOSFET 2N-CH 20V 2.4A MICRO8
Series：-

SKU:1460ae056890 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7501TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7501TR

Description：MOSFET 2N-CH 20V 2.4A MICRO8
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2.4A
Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：260pF @ 15V
Power - Max：1.25W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：Micro8™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7501TR

IRF7501TR

FET, MOSFET Arrays Overview

The IRF7501TR is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a Micro8 surface-mount package with a footprint half the size of standard SO-8. Key electrical parameters include a drain-source voltage (VDS) of 20 V, continuous drain current (ID) of 2.4 A at 25°C, and a maximum on-resistance (RDS(on)) of 0.135 Ω at VGS = 4.5 V. The device supports a junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a compact Micro8 package
Ultra-low on-resistance per silicon area for high efficiency
Fast switching speed capabilities

FET, MOSFET Arrays Applications

Portable electronics requiring minimal PCB space
PCMCIA cards
Thin application environments

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure the date code corresponds to product marked 505 or later to guarantee compliance with improved thermal resistance and current-handling ratings specified in the datasheet.

FET, MOSFET Arrays Selection Notes

Select this component when design constraints demand a dual N-channel MOSFET in an extremely small outline. The Micro8 package provides the smallest available footprint for this channel count. Evaluate thermal performance against the 100 °C/W junction-to-ambient rating for the intended operating environment.

FET, MOSFET Arrays Part Context

This part belongs to the Fifth Generation HEXFET family from International Rectifier, now part of Infineon Technologies. These devices utilize advanced processing techniques to achieve low on-resistance combined with ruggedized device designs suitable for reliable operation across various applications.