ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF7503TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 2.4A MICRO8. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7503TR
- Description：MOSFET 2N-CH 30V 2.4A MICRO8
- Series：-
- Mfr：Infineon Technologies
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.4A
- Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：210pF @ 25V
- Power - Max：1.25W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：Micro8™
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7503TR
FET, MOSFET Arrays Overview
The IRF7503TR is a dual N-channel power MOSFET from the Fifth Generation HEXFET family, housed in a Micro8 surface-mount package. It features a drain-to-source voltage rating of 30V and an ultra-low on-resistance of 0.135Ω at VGS=10V. The device supports a continuous drain current of 2.4A at 25°C and offers fast switching capabilities with typical gate charges of 7.8nC. Designed for high efficiency, it operates within a junction temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel Configuration
- Ultra Low On-Resistance
- Fast Switching Speed
- Low Profile Micro8 Package
FET, MOSFET Arrays Applications
- Portable Electronics
- PCMCIA Cards
- Battery-Powered Systems
FET, MOSFET Arrays Procurement Notes
Verify the component matches the specific Infineon or International Rectifier datasheet specifications. Confirm the Micro8 package outline dimensions and pin assignments align with the design requirements. Ensure the ordering suffix corresponds to the tape and reel packaging format required for automated assembly processes.
FET, MOSFET Arrays Selection Notes
Select this component when board space is limited due to its compact Micro8 footprint. Consider the 30V breakdown voltage and low RDS(on) for efficient power management in portable devices. Evaluate thermal performance based on the 100 K/W junction-to-ambient resistance for the specific PCB layout constraints.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET Power MOSFET series, utilizing advanced processing techniques to minimize on-resistance per silicon area. The Micro8 package provides half the footprint of a standard SO-8, making it suitable for applications requiring small form factors without sacrificing electrical performance.
FET, MOSFET Arrays Replacement Considerations
Check for direct replacements such as the IRF7503PBF for leaded versions or other HEXFET dual MOSFETs with similar 30V ratings and Micro8 packages. Verify that any substitute maintains the same pinout and thermal characteristics.
FET, MOSFET Arrays FAQ
What is the maximum junction temperature for the IRF7503?
The maximum operating junction temperature is 150°C.
Does the IRF7503 include body diodes?
Yes, it contains integral reverse p-n junction diodes in each channel.
What is the peak diode recovery dv/dt rating?
The peak diode recovery dv/dt is rated at 5.0 V/ns.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
